With activated carbon and fluorine as raw materials, high concentrated fluorine gas is slowly passed into the reaction furnace containing activated carbon, and the reaction temperature is controlled by controlling electric heating, fluorine supply rate and cooling reaction furnace. After dedusting, alkaline washing and dehydration, the crude products containing CF4, C2F6 and C3F8 can be obtained. Then, the crude mixture is subjected to batch low-temperature rectification to extract C2F6, and then the molecular sieve is used for further low-temperature adsorption dehydration, and the purity of C2F6 can be greater than 99.7%.

     Hexafluoroethane is a versatile etching technique commonly used in semiconductor manufacturing. It can be used for selective etching of metal silicides and metal oxides relative to their metal substrates.  It is also used to etch silicon dioxide on the silicon.

Hexafluoroethane can be used in conjunction with trifluoromethane as refrigerants R508A (61% hexafluoroethane) and R508B (54% hexafluoroethane).