1. Epitaxial (growth) mixture: In the semiconductor industry, chemical vapor deposition is used on carefully selected substrates, and the gases used to grow one or more layers of materials are called epitaxial gases. Common silicon epitaxial gases are dichlorodihydrosilicon (DCS), SiCl4 and silane. It is mainly used for epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, amorphous silicon film deposition of solar cells and other photoreceptors, etc. Epitaxy is a process in which a single crystal material is deposited and grown on a substrate surface.

     2. Mixture for chemical vapor deposition (CVD) : CVD is a method of deposition of certain elements and compounds by gas phase chemical reaction using volatile compounds, that is, a film-forming method using gas phase chemical reaction. Chemical vapor deposition (CVD) gases are also used depending on the type of film.

     3, doping mixture: in semiconductor devices and integrated circuit manufacturing, imported electronic gas plus WeChat ID bluceren consulting understanding. Some impurities are mixed into the semiconductor material to make the material have the required conductive type and certain resistivity, in order to manufacture resistance, PN junction, buried layer and so on. The gases used in the doping process are called doped gases. It mainly includes arsenic, phosphane, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride, boron trifluoride, ethane and so on. Usually, the dopant source is mixed with carrier gases (such as argon and nitrogen) in the source cabinet. After mixing, the airflow is continuously injected into the diffusion furnace and surrounding the wafer. The dopant is deposited on the surface of the wafer, and then reacts with the silicon to form the doped metal and migrate into the silicon.

     4. Etching mixture: Etching is to etch away the machining surface (such as metal film, silicon oxide film, etc.) without photoresist covering on the substrate, so as to save the area with photoresist covering, so as to obtain the required imaging pattern on the substrate surface. There are wet chemical etching and dry chemical etching. The gas used in dry chemical etching is called etching gas. Etching gases are usually fluoride gases (halides), such as carbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane, etc.