Rapid progress in semiconductor industry, the size of the transistor element also along with the evolution of semiconductor generation, in order to comply with narrow on the basis of constant electric field (constant field scaling), gold oxygen half a transistor gate thickness also narrowed with; however, when the traditional silica dielectric layer is less than a certain thickness, will produce very big gate leakage current, which we call direct tunneling current (direct tunneling current), the larger the leakage flows affect the energy loss of the semiconductor component, memory element lost information and so on, This can seriously affect the desired component characteristics.

Using an insulating layer with a high dielectric constant is an effective way to reduce the gate leakage current, since the insulating layer with a high dielectric constant has a thicker equivalent oxide thickness and thus reduces the direct tunneling current. But with high dielectric constant insulating layer is usually accompanied by some low electron mobility (mobility) and the reliability of the problem, so before the deposition of high dielectric constant insulating layer, usually do on the surface of a silicon wafer pretreatment, in order to form the humble surface (interfacial layer), to reduce the high dielectric constant insulating layer and defects caused by direct contact with silicon wafers, however dielectric layer is too thick will also reduce the high dielectric constant and dielectric constant of the insulating layer of loss of efficacy, here we introduce a kind of using carbon tetrafluoride plasma pretreatment to improve the process of high dielectric material properties.

This method is to use carbon tetrafluoride plasma pretreatment to improve the insulation layer of high dielectric constant and the characteristics of silicon wafers interface, we can find that using this method can effectively reduce the gate leakage current, furthermore this method also can effectively increase the content of fluorine atoms, more fluorine content can increase the reliability of components, figure 2 shows the use of carbon tetrafluoride plasma pretreatment can have better collapse feeder load, means can stand a multiple operation, the reliability of have a long time. It is a simple and no additional step to improve the high dielectric material by pretreating it with TETRafluorocarbon plasma. The high dielectric material produced by this method can meet the requirements of low power consumption and high reliability.