MO source, also known as high-purity metal-organic compounds, is the supporting source material of the modern compound semiconductor industry and the source material of the semiconductor lighting (LED) industry chain. From the perspective of the global market, the main application fields of MO Source are mobile device backlight, LIQUID crystal display backlight, liquid crystal large-screen backlight, semiconductor laser, aerospace efficient solar cell and other high-end military technology fields, signal lamp, automotive lighting and semiconductor lighting and other optoelectronic technology fields.

MO source variety, used in the research and production of MO source more than 70 kinds, MO source concept is beyond the scope of the metal organic compounds now MO source meaning should be: where in MOCVD epitaxy technology as the basic material in the use of metal organic compounds or elements are collectively referred to as source of MO, MO source in foreign literature often referred to as the "precursor of MOCVD" in general. But in compound semiconductor materials research and development and production, in addition to Ⅴ hydride, Ⅵ elements (e.g., NH3, AsH3, H2Se, etc.), MOCVD process using high purity base material is mainly Ⅱ, Ⅲ metallic organic compounds, such as TMGa, DMCd, etc.) and organic compound Ⅴ, Ⅵ elements (the TBP, TBAs, etc.), currently used in MOCVD process Ⅴ, Ⅵ material is still the element hydrides give priority to.

At present, there are three main forms of application of MO source: first, metal oxide presomatic material. The so-called metal oxide is formed by the reaction of MO source with water or ozone and other media, and the MO source of oxide is formed in this process. For example, ALED is used in the reaction of trimethyl aluminum with water vapor to form a thin film of alumina, which is the most common application of The MO source. Second, the former body material of metal nitrides; Third, the metal film of the former body material. MO source is liquid at room temperature, easy to store for a long time, chemical properties will not change. In MOCVD, MO reacts with compounds such as ammonia gas to form biochemical compounds such as nitrides and phosphates, which are deposited on the substrate and finally form the compound - semiconductor.

As the raw material of semiconductor lighting industry chain, MO source is also an extremely dangerous chemical. There are still some problems in the process of use: First, MO source is very active. Extremely sensitive to air and water vapor, spontaneous combustion occurs in the air, and violent explosion occurs when water is encountered. The MOCVD process requires no or very low oxygen content in the MO source, making it difficult to synthesize, purify, analyze, and fill equipment materials, as well as protective measures and operating conditions. Second, common trimethyl gallium, trimethyl indium and trimethyl aluminum produce methyl free radicals when they grow at high temperature. Methyl free radicals can decompose carbon atoms at the growth temperature, causing uncontrollable carbon contamination to the thin film materials, thus reducing the photoelectric properties of the materials. Third, indium trimethyl and magnesium ferrocene are solid MO sources, with the decrease of the use of steam pressure is not stable.